发明名称 |
Memory cell using negative differential resistance field effect transistors |
摘要 |
A memory cell using both negative differential resistance (NDR) and conventional FETs is disclosed. A pair of NDR FETs are coupled in a latch configuration so that a data value passed by a transfer FET can be stored at a storage node. By exploiting an NDR characteristic, the memory cell can be implemented with fewer active devices. Moreover, an NDR FET can be manufactured using conventional MOS processing steps so that process integration issues are minimized as compared to conventional NDR techniques.
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申请公布号 |
US6724655(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20010029077 |
申请日期 |
2001.12.21 |
申请人 |
PROGRESSANT TECHNOLOGIES, INC. |
发明人 |
KING TSU-JAE |
分类号 |
G11C11/412;G11C5/14;G11C11/39;G11C11/41;H01L21/28;H01L21/8244;H01L27/088;H01L27/11;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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