发明名称 |
Method of making a functional device with deposited layers subject to high temperature anneal |
摘要 |
A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.
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申请公布号 |
US6724967(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20010799491 |
申请日期 |
2001.03.07 |
申请人 |
DALSA SEMICONDUCTOR INC. |
发明人 |
OUELLET LUC;DALLAIRE ANNIE |
分类号 |
G02B6/12;G02B6/132;(IPC1-7):G02B6/10 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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