发明名称 Method of making a functional device with deposited layers subject to high temperature anneal
摘要 A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.
申请公布号 US6724967(B2) 申请公布日期 2004.04.20
申请号 US20010799491 申请日期 2001.03.07
申请人 DALSA SEMICONDUCTOR INC. 发明人 OUELLET LUC;DALLAIRE ANNIE
分类号 G02B6/12;G02B6/132;(IPC1-7):G02B6/10 主分类号 G02B6/12
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