发明名称 |
Thin film deposition method including using atomic layer deposition without purging between introducing the gaseous reactants |
摘要 |
The present invention discloses a method of fabricating a thin film in a chamber where a heater and a suscepter are located. The method includes the steps of disposing an object on the susceptor so as to form the thin film thereon; heating the object; a first sub-step of introducing a first gaseous reactant into the first chamber such that the first gaseous reactant is absorbed on the object to form an absorption layer; a second sub-step of introducing a second gaseous reactant into the first chamber such that the second gaseous reactant reacts with the absorption layer absorbed on the object; and a third sub-step of introducing a reducing gas into the first camber such that the reducing gas reduces by-products and impurities of the first and second gaseous reactants.
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申请公布号 |
US6723595(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20020061704 |
申请日期 |
2002.02.01 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
PARK CHANG-BOO |
分类号 |
H01L21/205;C23C16/44;C23C16/455;(IPC1-7):H01L21/828;H01L21/824;H01L21/31;H01L21/469 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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