| 摘要 |
A thermal and electrical interconnect for heterojunction bipolar transistors is disclosed wherein the interconnect is essentially comprised of gold and in thermal and electrical contact with each of the interdigitated emitter fingers and is capable of transporting heat fluxes between 0.25-1.5 mW/mum2. The interconnect is electrodeposited to form a low-stress interface with the emitter finger, thereby increasing the lifetime and reliability of the transistor. |
