| 摘要 |
FIELD: electronics, development of HICs for solid modules. SUBSTANCE: crystal of semiconductor device is located in recess in face side of dielectric substrate of board, blind metallized holes are made on backside of dielectric substrate. Metallization of holes is used as lower plates of capacitors, dielectric of capacitors is residual thickness of bottom of dielectric substrate in blind metallized holes. Upper plates of capacitors are arranged in composition of topological pattern of metallization on face side of dielectric substrate and thickness of substrate between metallized holes and sides of recess is equal to 0.001-1.0 mm. EFFECT: improved heat dissipation from crystal of semiconductor device, enhanced functional reliability of hybrid integrated circuit. 8 cl, 1 dwg |
