发明名称 |
Photodiode and photodiode module |
摘要 |
Besides the central pn-junction and the central electrode, a PD chip has a peripheral pn-junction and a peripheral electrode which do not appear on the sides. The ends of the peripheral pn-junction are covered with a protection layer for preventing self-shortcircuit. A reverse bias is applied to the peripheral electrode for making a wide depletion layer beneath the peripheral pn-junction. Extra carriers generated by peripherally-incidence rays are fully absorbed by the peripheral depletion layer and annihilated by the reverse bias.
|
申请公布号 |
US6724063(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20020143956 |
申请日期 |
2002.05.14 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KUHARA YOSHIKI;TERAUCHI HITOSHI |
分类号 |
H01L31/10;H01L31/02;H01L31/0352;H01L31/103;(IPC1-7):H01L31/00 |
主分类号 |
H01L31/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|