发明名称 |
Semiconductor integrated circuit device and manufacturing method which avoids oxidation of silicon plug during thermal treatment of capacitor insulating film |
摘要 |
In a semiconductor integrated circuit device, a polycrystalline silicon film is formed along an inner wall of a trench in which a capacitor is to be formed, and the polycrystalline silicon film and a lower electrode is contacted to each other on the entire inner wall of the trench. Oxygen permeated into the lower electrode during a thermal treatment of a tantalum oxide film is consumed at an interface between the polycrystalline silicon film and the lower electrode. Thus, oxygen does not reach the surface of a silicon plug below the lower electrode that would cause oxidation on the surface of the silicon plug and form a high-resistance oxide layer when a dielectric film formed on a lower electrode of a capacitor of a DRAM is subjected to a thermal treatment in an oxygen atmosphere.
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申请公布号 |
US6724034(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20020230107 |
申请日期 |
2002.08.29 |
申请人 |
RENESAS TECHNOLOGY CORPORATION;NEC CORPORATION;NEC ELECTRONICS CORPORATION |
发明人 |
IIJIMA SHINPEI;SAKUMA HIROSHI |
分类号 |
H01L21/8242;H01L21/02;H01L21/285;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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