发明名称 |
Method for reducing gate oxide surface irregularities |
摘要 |
Gate oxide surface irregularities, such as surface roughness, are reduced by treatment with an oxygen-containing plasma. Embodiments include forming a gate oxide layer and then treating the formed gate oxide layer with an oxygen plasma to repair weak spots and fill in pin holes and surface irregularities, thereby reducing gate/gate oxide interface roughness.
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申请公布号 |
US6723666(B1) |
申请公布日期 |
2004.04.20 |
申请号 |
US20030379792 |
申请日期 |
2003.03.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
EN WILLIAM G.;FISHER PHILIP A. |
分类号 |
H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/31;H01L21/469;H01L21/302 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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