发明名称 Method for reducing gate oxide surface irregularities
摘要 Gate oxide surface irregularities, such as surface roughness, are reduced by treatment with an oxygen-containing plasma. Embodiments include forming a gate oxide layer and then treating the formed gate oxide layer with an oxygen plasma to repair weak spots and fill in pin holes and surface irregularities, thereby reducing gate/gate oxide interface roughness.
申请公布号 US6723666(B1) 申请公布日期 2004.04.20
申请号 US20030379792 申请日期 2003.03.06
申请人 ADVANCED MICRO DEVICES, INC. 发明人 EN WILLIAM G.;FISHER PHILIP A.
分类号 H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/31;H01L21/469;H01L21/302 主分类号 H01L21/28
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