| 摘要 |
An electrostatic discharge (ESD) device used with a high-voltage input pad is described. The ESD device serves as a secondary device of a two-stage protection circuit, and comprises a substrate, a first MOS transistor and a second MOS transistor. The first MOS transistor is disposed on the substrate and comprises a first gate, a first drain and a first source, wherein the first gate is coupled to a bias Vg1, and the first drain is coupled to the high-voltage input pad. The second MOS transistor is disposed on the substrate and comprises a second gate, a second drain and a second source, wherein the second gate and the second source are both grounded, and the second drain is electrically connected with the first source of the first MOS transistor.
|
