发明名称 |
Photoresist composition for deep UV radiation containing an additive |
摘要 |
The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.
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申请公布号 |
US6723488(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20010037161 |
申请日期 |
2001.11.07 |
申请人 |
CLARIANT FINANCE (BVI) LTD |
发明人 |
KUDO TAKANORI;DAMMEL RALPH R.;PADMANABAN MUNIRATHNA |
分类号 |
G03F7/039;G03F7/004;G03F7/033;G03F7/40;H01L21/027;(IPC1-7):G03F7/004 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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