Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase

摘要

A multi layer semi-conductor comprising a semi-conductor monocrystalline base and layers of semi-conducting material of differing conductivity and/or doping concentrations is formed by the thermal decomposition or reduction of the gas phase containing the semi-conductor layer material on to heated discs of the base material which are stacked in register. Preferably the semi-conductor material deposited is the same as the base material, e.g. Si on Si, but the following arrangements may also be produced: Ge on Si, gallium arsenide on Ge, aluminium arsenide on Ge or Si, gallium arsenide on aluminium arsenide, aluminium phosphide on Si, gallium phosphide on Si and indium phosphide on Ge. The lattice constants of the base material and the deposited material should not differ by more than 5%. Si is deposited by decomposition of SiCl4 or SiHCl3 and layers of varying composition are formed by decomposition of a mixture of the Si and Ge gaseous compounds. Doping materials such as BCl3 and PCl3 are also added. The discs 4 of the base material are stacked, preferably vertically in a quartz tube 2, the stack being formed by means of pins 3 secured in a graphite plate. The stacked discs are preferably pre-heated, the gaseous semi-conductor compound is introduced into the tube 2 and the stack is zone heated by means of a displaceable induction coil 5 which moves along the stack. Spacing members may also be introduced between the semi-conductor discs. Specifications 853,729, 861,135 and 914,042 are referred to.ALSO: A multi-layer semi-conductor comprising a semi-conductor mono-crystalline base and layers of semi-conducting material of differing conductivity and/or doping concentrations is formed by the thermal decomposition or reduction of the gas phase containing the semi-conductor layer material on to heated discs of the base material which are stacked in register. Preferably the semi-conductor material deposited is the same as the base material, e.g. Si on Si, but the following arrangements may also be produced: Ge on Si, gallium arsenide on Ge, aluminium arsenide on Ge or Si, gallium arsenide on aluminium arsenide, aluminium phosphide on Si, gallium phosphide on Si and indium phosphide or Ge. The lattice constants of the base material and the deposited material should not differ by more than 5%. Si is deposited by decomposition of SiCl4 or SiHCl3 and layers of varying composition are formed by decomposition of a mixture of the Si and Ge gaseous compounds. Doping materials such as BCl3 and PCl3 are also added. The discs 4 of the base material are stacked, preferably vertically in a quartz tube 2, the stack being formed by means of pins 3 secured in a graphite plate. The stacked discs are preferably preheated, the gaseous semi-conductor compound is introduced into the tube 2 and the stack is zone heated by means of a displaceable induction coil 5 which moves along the stack. Spacing members may also be introduced between the semi-conductor discs. Specifications 853,729, 861,135 and 914,042 are referred to.