| 摘要 |
In a lithographic proximity method for wiring an end or internal side surface of a substrate, the required exposure of strips, defining the wiring pattern, is performed by a mask having a diffraction structure to deflect exposure radiation to the side surface. An exposure beam, which is perpendicularly incident on the mask, is used so that enhanced tolerance for proximity gap width variations is obtained. The method allows manufacture of accurate and fine wiring. |
