METHOD FOR FORMING NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for forming a non-volatile memory device is provided to be capable of preventing the generation of a bridge phenomenon due to the interval reduction between floating gate electrodes. CONSTITUTION: A tunnel isolating pattern(102a), the first floating gate pattern(103a), and a trench(106) are sequentially formed at the upper portion of a semiconductor substrate(101). Then, the trench is filled with an isolation layer(107a). An etch stop layer(110a) and a mold layer(111a) are sequentially formed on the entire surface of the resultant structure. A groove(114a) is formed by sequentially patterning the mold layer and the etch stop layer for exposing the first floating gate pattern. Then, the groove is filled with the second floating gate pattern(115a).