METHOD FOR MANUFACTURING GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a gate of a semiconductor device is provided to be capable of increasing gate bias voltage and reducing gate CD(Critical Dimension). CONSTITUTION: A gate oxide layer(22) and a polysilicon layer(24) are sequentially deposited on a substrate(20). An ion implantation layer(26) is formed on the lower portion of the polysilicon layer by carrying out an ion implantation process. A heat treatment is then performed on the resultant structure. A photoresist mask(28) is formed on the polysilicon layer. The polysilicon layer and the ion implantation layer are selectively removed by carrying out a dry etching process using the photoresist mask as an etching mask. The photoresist mask is removed from the resultant structure. Preferably, the ion implantation layer has a thickness of 100 angstrom.