METHOD FOR MANUFACTURING MOS TRANSISTOR

摘要

PURPOSE: A method for manufacturing an MOS(Metal Oxide Semiconductor) transistor is provided to be capable of preventing boron ions from penetrating into a silicon substrate under a BPSG(Boron Phosphorous Silicate Glass) layer forming process. CONSTITUTION: An MOS transistor is formed on the predetermined portion of a silicon substrate(21). At this time, the MOS transistor includes a gate electrode(24), and a source/drain(27). A titanium silicide layer(28) is formed on the gate electrode and the source/drain, respectively. A silicon nitride layer(29) is formed on the entire surface of the resultant structure. An ozone treatment is performed on the silicon nitride layer. A BPSG(Boron Phosphorous Silicate Glass) layer(30) is then formed on the silicon nitride layer.