SEMICONDUCTOR DEVICE INCLUDING FET HAVING IMPROVED ISOLATION CHARACTERISTIC

摘要

PURPOSE: A semiconductor device including a FET having an improved isolation characteristic is provided to improve the isolation characteristic by forming a high-concentration impurity region between a gate electrode and the FET adjacent to the gate electrode. CONSTITUTION: One or more metal layers are used for forming a Schottky junction with a semi-insulating substrate or an insulating layer on a substrate. An impurity diffusion region is formed on the semi-insulating substrate or the insulating layer on the substrate. A high-concentration impurity region is formed at a region within a metal layer, which is adjacent to another metal layer or the impurity diffusion region, in order to suppress expansion of a depletion layer from the corresponding metal layer.