发明名称 THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A thin film capacitor and a manufacturing method thereof are provided to be capable of preventing the generation of a short at the lower corner of a capacitor portion and simplifying the manufacturing process. CONSTITUTION: A thin film capacitor is provided with a dielectric layer(27) formed on the predetermined portion of the first electrode layer, the second electrode layer(28) formed on the dielectric layer, and an interlayer dielectric(30) formed on the entire surface of the resultant structure, At this time, the interlayer dielectric has an electrode hole(100) for partially exposing the second electrode layer and a via hole(200) for partially exposing a lower metal line. The thin film capacitor further includes a metal portion filled in the electrode hole and the via hole. The metal portion is made of a barrier metal(31) and a tungsten layer(32).
申请公布号 KR20040032333(A) 申请公布日期 2004.04.17
申请号 KR20020061427 申请日期 2002.10.09
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KWON, YEONG MIN
分类号 H01L29/78;(IPC1-7):H01L29/78 主分类号 H01L29/78
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