COPPER CONTAMINATED POSITION SPECIFYING METHOD IN PROCESS OF REPRODUCING SILICON WAFER, COOPER CONTAMINATION DETECTING METHOD, AND SILICON WAFER REPRODUCING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for specifying a Cu contaminated position by non-destructively, simply and accurately detecting Cu to be possibly mixed into a silicon wafer when reproduced. SOLUTION: The method for specifying the Cu contaminated position when reproducing the silicon wafer in combination of one or more treatment processes uses a P-type silicon wafer or a P-type silicon wafer and a N-type silicon wafer as a monitoring wafer to perform at least one detecting operation in the reproducing processes for detecting the electric resistance of the monitoring wafer before and after the plurality of single or consecutive treatment processes during reproduction. COPYRIGHT: (C)2004,JPO