发明名称 |
Layer arrangement used in the production of thin layer solar cells comprises a substrate, a metal film, a metal dichalcogenide separating layer and a chalcogenide semiconductor layer |
摘要 |
Layer arrangement comprises a substrate (2), a metal film (3), a metal dichalcogenide separating layer (4) and a chalcogenide semiconductor layer (6). The crystallographic orientation of the separating layer is such that the c-axis lies perpendicularly to the metal film parallel to surface of the metal film and next to the chalcogenide semiconductor layer. An Independent claim is also included for a process for the production of a solar cell based on the layer arrangement.
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申请公布号 |
DE10247735(B3) |
申请公布日期 |
2004.04.15 |
申请号 |
DE20021047735 |
申请日期 |
2002.10.09 |
申请人 |
HAHN-MEITNER-INSTITUT BERLIN GMBH |
发明人 |
FUERTES MARRON, DAVID;MEEDER, ALEXANDER;SCHEDEL-NIEDRIG, THOMAS;WUERZ, ROLAND;LUX-STEINER, MARTHA CHRISTINA |
分类号 |
C30B33/12;H01L21/20;H01L21/304;H01L31/0256;H01L31/032;H01L31/0336;H01L31/0392;H01L31/072;H01L31/18;(IPC1-7):H01L31/18;H01L31/033 |
主分类号 |
C30B33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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