MIRROR FOR ALIGNER, AND REFLECTION MASK THEREFOR, AS WELL AS ALIGNER AND METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of deterioration in the shape of a resist pattern obtained by developing a resist film after selectively irradiating the resist film with extreme ultraviolet rays.

SOLUTION: An aligner is provided with a reflection mask 20, a first reflection mirror 30a, a second reflection mirror 30b, a third reflection mirror 30c, and a fourth reflection mirror 30d. The reflection mask 20 comprises a reflection layer for reflecting extreme ultraviolet rays formed on a mask substrate, an extreme ultraviolet absorbing layer for absorbing extreme ultraviolet rays selectively formed on the reflection layer, and an infrared absorption layer formed at least on an area on which the extreme ultraviolet absorbing layer is not formed. Each of the reflection mirrors comprises a reflection layer for reflecting extreme ultraviolet rays formed on the mirror substrate and an absorption layer for absorbing infrared rays formed on the reflection layer.

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