| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which enables a selective etching of a rear layer, while protecting the front of a semiconductor substrate as simply as possible. SOLUTION: The method enables the selective etching of the backside layer 10 of the semiconductor substrate 1 whose layer on the front is different from that on the rear. Specifically, after protecting the front of the substrate 1 by adhering an etchant-resistant resin film 2 thereto, the backside layer 10 of the substrate 1 is etched using an etchant. Then, the resin film 2 is separated from the substrate 1. COPYRIGHT: (C)2004,JPO
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