发明名称 |
Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devices |
摘要 |
A test device and method for detecting alignment of word lines and deep trench capacitors in DRAM devices with vertical transistors. In the test device, an active area is disposed in the scribe line region. An H-type deep trench capacitor is disposed in the active area, and has parallel first and second portions and a third portion. Each of the first and second portions has a center and two ends. The third portion is disposed between the centers of the first and second portions. First to fourth conductive pads are disposed on the two ends of the first and second portions respectively. A bar-type conductive pad is disposed between the first and second portions, having a center aligned with a center of the third portion.
|
申请公布号 |
US2004069989(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20030613175 |
申请日期 |
2003.07.03 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
WU TIE JIANG;HUANG CHIEN-CHANG;JIANG BO CHING;TING YU-WEI;HUANG CHIN-LING |
分类号 |
H01L21/8242;H01L23/544;H01L27/108;(IPC1-7):H01L21/66;G01R31/26;H01L23/58 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|