| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which eliminates yield reduction and characteristics deterioration, exerts high intensity and high efficiency, and reduces processing costs, and to provide its manufacturing method. <P>SOLUTION: The device is provided with; a first conductive type composite semiconductor substrate 1; a light-emitting layer 2 which is provided on the substrate 1 and consisting of an InGaAlP-base or AlGaAs-base composite semiconductor, being sequentially stacked with a first conductive type clad layer 3, an active layer 4 and a second conductive type clad layer 5; and an uneven region 8 having a height and width equal to or less than an emission wavelength, which is formed in a light-extracting surface of the light-emitting layer 2 or a layer thereabove. Alternatively, the device is provided with the substrate 1, the light-emitting layer 2 formed on the substrate 1, a graded layer 6 which is substantially in lattice matching with the uppermost portion of the light-emitting layer 2, with its lattice constant gradually varying from the lower layer to the upper layer, and a current diffusion layer 7 which is substantially in lattice matching with the uppermost layer of the graded layer 6, being transparent to the emission wavelength. <P>COPYRIGHT: (C)2004,JPO |
