| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device which can obtain a readout signal output having a high S/N and a read method of the same, and also to provide a write method of the magnetic memory device which enables information read operation in high S/N. SOLUTION: A storage cell 12 is formed of a pair of magnetic storage elements 12A, 12B. The magnetic storage elements 12A, 12B are respectively connected at one ends to the sense bit-lines 21A, 21B, while connected at the other ends to the sense word line 31 via a pair of the reverse-current protection diodes 13A, 13B. In the grounding side of the sense word line 31, a constant current circuit 108B is arranged. The constant current circuit 108B has the function to keep constant the current flowing into the sense word line 31, and is formed of diode 32 for generating a constant voltage, a transistor 33 and a current limiting resistor 34. COPYRIGHT: (C)2004,JPO |
