发明名称 CVD FILM MANUFACTURING METHOD AND CVD FILM MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a CVD film manufacturing method and a CVD film manufacturing apparatus for depositing a thin film of uniform refractive index and film thickness without degrading the film deposition rate and the yield. SOLUTION: In the CVD film manufacturing method and the CVD film manufacturing apparatus, an upper electrode 3 and a lower electrode 4 are disposed facing each other at a predetermined interval in a closed reaction chamber 2, substrates 6a-6c are held on the lower electrode 4, the reaction chamber 2 is evacuated, high frequency voltage is applied between the electrodes 3 and 4 to generate plasma, the electrodes 3 and 4 are heated to a desired temperature, raw material gas of the thin film is fed to a shower plate 12 integrated with the upper electrode 3 through a through hole formed in the upper electrode 3, and blown over the entire upper surfaces of the substrates 6a-6c through the shower plate 12, a gas diffuser 14 is provided between the through hole in the upper electrode 3 and the shower plate 12, and the gas passing through the through hole is guided to the surface direction of the shower plate 12 by the gas diffuser 14. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004115837(A) 申请公布日期 2004.04.15
申请号 JP20020278037 申请日期 2002.09.24
申请人 HITACHI CABLE LTD 发明人 IMOTO KATSUYUKI
分类号 C23C16/455;H01L21/31;(IPC1-7):C23C16/455 主分类号 C23C16/455
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