发明名称 |
Power semiconductor device |
摘要 |
A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.
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申请公布号 |
US2004070047(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20030467344 |
申请日期 |
2003.08.20 |
申请人 |
MAJUMDAR GOURAB;HATAE SHINJI;YAMAMOTO AKIHISA |
发明人 |
MAJUMDAR GOURAB;HATAE SHINJI;YAMAMOTO AKIHISA |
分类号 |
H01L21/82;H01L21/8234;H01L27/088;H01L29/24;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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