| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride single crystal substrate having small crystal defect density and a large surface area from a gallium nitride single crystal layer laminated on the surface of silicon (Si) single crystal used as a substrate and having low dislocation density, excellent crystal quality and a large diameter and to provide the gallium nitride single crystal substrate manufactured by the same method. <P>SOLUTION: The gallium nitride single crystal substrate is manufactured by forming an amorphous layer containing boron and phosphorus on the surface of a silicon single crystal substrate, forming a boron phosphide single crystal layer on the amorphous layer, growing a 1st gallium nitride (GaN) single crystal layer on the boron phosphide single crystal layer and after that, removing the silicon single crystal substrate, the amorphous layer and the boron phosphide single crystal layer to separate the 1st gallium nitride single crystal layer and laminating a 2nd gallium nitride single crystal layer on the surface of the 1st gallium nitride single crystal layer. <P>COPYRIGHT: (C)2004,JPO |
