| 摘要 |
PROBLEM TO BE SOLVED: To provide an ohmic electrode made of homogeneous alloy and having low resistance. SOLUTION: Multiple kinds of metals used as an ohmic electrode is selected (step1), and an alloy to be made by these metals is specified (step 2). A ratio of atomic number of metals laminated before annealing is set to a composition ratio of the specified alloy or its approximate ratio (step 3), and each metal is laminated with a ratio of film thickness in accordance with the ratio of atomic number (step 4). An annealing step is carried out (step 5) to form the laminated metals into the alloy. In this way, an alloy with superior uniformity is formed, and the ohmic electrode with low resistance can be formed. In addition, the annealing temperature optimum to the formation of the alloy can be set, so the semiconductor process can be made efficient, and a yield can be improved. COPYRIGHT: (C)2004,JPO
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