| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that realizes a slimming processing method by plasma etching that requires no removal of resist reaction product materials by enhancing accuracy of dimensions in an etching process. SOLUTION: The manufacturing method includes: a dummy discharge process F12 of conducting discharging by using a semiconductor substrate; a dummy processing process F13 of using a dummy sample having the same resist pattern as that of a real device to apply slimming processing to the resist pattern and a resist lower layer film by plasma etching at the same time; and a process F14 of applying the slimming processing to the resist pattern and the resist lower layer film of the semiconductor wafer on which the resist pattern for the real device is formed by the plasma etching at the same time. COPYRIGHT: (C)2004,JPO
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