| 摘要 |
PROBLEM TO BE SOLVED: To remove a remaining catalyst material while forming a single domain. SOLUTION: This method of manufacturing a semiconductor thin film comprises a process for patterning an amorphous silicon film 2 so as to include a crystallization accelerating region 5a where the catalyst material is added, a crystal growth accelerating region 5b where a gettering element for moving the catalyst material is added, and a connecting region 5c where the crystallization accelerating region is connected with the crystal growth accelerating region, a process for forming a gettering element adding region 8 in the crystal growth accelerating region 5b to add the gettering element therein, a process for forming a catalyst material adding region 10 in the crystallization accelerating region 5a to add the catalyst material therein, and a process for moving the the catalyst material to the gettering element adding region 8 while crystal-growing a crystalline semiconductor film of the single crystal grain in the crystal growth region 13 in the crystal growth accelerating region 5b based on the crystal nuclei selected from the crystallization accelerating region 5a by heating the amorphous silicon film 5 in which the catalyst material and gettering element are added. COPYRIGHT: (C)2004,JPO
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