发明名称 SILICON ANISOTROPIC ETCHING LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide silicon anisotropic etching liquid for selectively etching only silicon without etching aluminum. SOLUTION: A problem is solved with anisotropic etching solution where silicon is dissolved into 3.0 to 20.0 mass % of TMAH water solution so that it becomes 0.9 to 8.0 mass % and oxidant is added or silicon anisotropic etching solution comprising 3.0 to 20.0 mass % of TMAH, silicon and ammonium nitrate. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004119674(A) 申请公布日期 2004.04.15
申请号 JP20020280796 申请日期 2002.09.26
申请人 TOYOTA CENTRAL RES & DEV LAB INC;DENSO CORP 发明人 FUJITSUKA TOKUO;MURATA KANAE;FUNABASHI HIROBUMI;KAWASAKI EIJI;FUKADA TAKESHI
分类号 H01L21/308;(IPC1-7):H01L21/308 主分类号 H01L21/308
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