发明名称 |
SILICON ANISOTROPIC ETCHING LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide silicon anisotropic etching liquid for selectively etching only silicon without etching aluminum. SOLUTION: A problem is solved with anisotropic etching solution where silicon is dissolved into 3.0 to 20.0 mass % of TMAH water solution so that it becomes 0.9 to 8.0 mass % and oxidant is added or silicon anisotropic etching solution comprising 3.0 to 20.0 mass % of TMAH, silicon and ammonium nitrate. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004119674(A) |
申请公布日期 |
2004.04.15 |
申请号 |
JP20020280796 |
申请日期 |
2002.09.26 |
申请人 |
TOYOTA CENTRAL RES & DEV LAB INC;DENSO CORP |
发明人 |
FUJITSUKA TOKUO;MURATA KANAE;FUNABASHI HIROBUMI;KAWASAKI EIJI;FUKADA TAKESHI |
分类号 |
H01L21/308;(IPC1-7):H01L21/308 |
主分类号 |
H01L21/308 |
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