| 摘要 |
PROBLEM TO BE SOLVED: To provide substrate processing equipment which is capable of depositing a film stably and efficiently on a substrate W. SOLUTION: The substrate processing equipment 20 supports the substrate W as a processing object at a position so as to make it confront a heater unit 24 and rotates a holding member 120 that holds the substrate W. The heater unit 24 is equipped with an SiC heater 114 and a heat reflecting member 116 housed in a quartz bell jar 112 formed of transparent quartz, a processing vessel 22 is reduced in internal pressure, and the quartz bell jar 112 is also reduced in internal pressure, so that the quartz bell jar 112 can be reduced in wall thickness, whereby the quartz bell jar 112 can be improved in thermal conductivity and the substrate W can be protected against contamination caused by the SiC heater 114. COPYRIGHT: (C)2004,JPO
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