LIGHT RECEIVING ELEMENT WITH BUILT-IN CIRCUIT AND METHOD OF INSPECTING SAME

摘要

PROBLEM TO BE SOLVED: To detect an interface between a first p-type semiconductor layer and a second p-type semiconductor layer and also detect a p-type and an n-type irregular diffusing layers generated within the second p-type semiconductor layer. SOLUTION: The light receiving element with built-in circuit is provided with an irregular diffusing layer detecting part 70 as an irregular diffusing layer detecting means wherein a pair of n-type diffusing layers 21, 22 are formed at predetermined intervals from the surface of the adjacent p--type high specific resistance epitaxial layer 2 to a photodiode 60 as the light receiving element via an element isolation region 35. Accordingly, a lateral npn transistor is formed of a pair of n-type diffusing layers 21, 22, p-type semiconductor substrate 1 and p--type high specific resistance epitaxial layer 2. The p-type or n-type irregular diffusing layer generated at the interface between the p-type semiconductor substrate 1 and the p--type high specific resistance epitaxial layer 2, and at the lower part and the surface of the p-type high specific resistance epitaxial layer 2 can be detected by measuring a current amplification coefficient (hfe) of the lateral npn transistor. COPYRIGHT: (C)2004,JPO