| 发明名称 |
Trench transistor includes insulation layer projecting over spacer along surface of semiconductor region, serving as dopant source |
| 摘要 |
An insulating layer (4) projects over the spacer along the surface of the semiconductor region (9), serving as a dopant source for the semiconductor zone (11) and a channel zone in the semiconductor region (9) runs along the insulating layer (4). An Independent claim is included for the corresponding manufacture.
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| 申请公布号 |
DE10245249(A1) |
申请公布日期 |
2004.04.15 |
| 申请号 |
DE20021045249 |
申请日期 |
2002.09.27 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HENNINGER, RALF;HIRLER, FRANZ |
| 分类号 |
H01L21/225;H01L21/336;H01L29/417;H01L29/423;H01L29/45;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/225 |
| 代理机构 |
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代理人 |
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