发明名称 PLASMA FILM FORMING SYSTEM
摘要 A plasma film forming system comprising two first electrodes (51) connected to a power supply (4) and two earthed second electrodes (52) that are arranged sequentially as the second electrode (52), the first electrode (51), the first electrode (51), and the second electrode (52). A film material gas (first gas) is passed through a first flow path (50a) formed between the first electrodes (51) at the center. An exciting gas (second gas), that is excited so as to be able to form the material into a film by plasma but is not formed into a film itself by only being excited, is passed through second flow paths, or plasma discharge spaces (50b), between the first and the second electrodes (51, 52) on opposite sides. These gases merge at the crossing (20c) of the first and second flow paths and are discharge via a common discharge path (25c). Accordingly, a film is prevented from depositing on system-constituting members such as electrodes.
申请公布号 CA2471987(A1) 申请公布日期 2004.04.15
申请号 CA20032471987 申请日期 2003.10.07
申请人 SEKISUI CHEMICAL CO., LTD. 发明人 KAWASAKI, SHINICHI;NAKAJIMA, SETSUO;KITAHATA, HIROYA;NAKATAKE, SUMIO;EGUCHI, YUJI;ANZAI, JUNICHIRO;NAKANO, YOSHINORI
分类号 C23C16/44;C23C16/452;C23C16/455;C23C16/509;H01J37/32;(IPC1-7):H01L21/205;C23C16/50 主分类号 C23C16/44
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