| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device using a large and inexpensive substrate showing the stable characteristics, which also includes a single crystal Si thin film and not generating any variations and fluctuations in the junction strength of the single crystal Si thin film and in the stress working on the junction interface, and also to provide a method of manufacturing the semiconductor device. <P>SOLUTION: A polycrystal Si thin film 4 and a single crystal Si thin film 5 are formed on a SiO<SB>2</SB>film 2 deposited on the insulated substrate 1. Difference in the specified linear expansion between the insulated substrate 1 and the single crystal Si thin film 5 is about 250ppm or less within the temperature range from the room temperature or higher to 600°C or less. <P>COPYRIGHT: (C)2004,JPO</p> |
