| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure method and an aligner in which dispersion in dimensions of a resist pattern is suppressed. SOLUTION: A resist is applied and formed on a substrate (step T1). The substrate is led into the aligner (step T2). After predetermined processing (steps T3-T5) when exposure processing is started, the substrate is moved to a predetermined exposure position (step T6). In auto-focus processing (step T10), thickness of a partial resist positioned in an exposure shot region is measured by a thickness measuring unit. Based upon a database, optimal exposure is calculated from the measured resist thickness and the dimensions of the inputted resist pattern (steps T7-T9). Based upon the data of the calculated exposure, exposure processing (step T10) is carried out. COPYRIGHT: (C)2004,JPO |
