DRIVE CIRCUIT FOR POWER SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that detection cannot be ensured in respect of the occurrence of an excess current in the case where an increasing rate di/dt of the excess current is reduced due to a low gate resistance and thus the increasing rate of the gate voltage is reduced. SOLUTION: An impedance circuit 24 is inserted between the gate of an IGBT 11 and an ON MOS transistor 23. In the circuit 24, the impedance in the case where the ON MOS transistor 23 is seen from the gate of the IGBT 11 is made higher than the impedance in the case where the gate of the IGBT 11 is seen from the ON MOS transistor 23. COPYRIGHT: (C)2004,JPO