| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a gallium nitride-based compound semiconductor element wherein a pattern width can be precisely controlled when a gallium nitride-based compound semiconductor layer is etched, and a smoothly etched side wall can be obtained, and that is high in yield by matching the position of an opening of an insulation film and that of a projecting part in high accuracy. SOLUTION: A laminated pattern of an SiO<SB>2</SB>layer 4 and a ZrO<SB>2</SB>layer 5 is formed, and a GaN-based semiconductor layer 3 is dry-etched with a chlorine-based gas while the ZrO<SB>2</SB>layer 5 is used as a mask, forming a ridge 109a. After a ZrO<SB>2</SB>film is entirely piled up, the SiO<SB>2</SB>layer 4 is removed by a fluorine-based etching liquid for lifting off, the ZrO<SB>2</SB>film 7a is selectively left on both sides of the ridge 109a. Since the laminated pattern is used as it is as a mask for lifting off, an electrode can be formed at a designed position without displacement. COPYRIGHT: (C)2004,JPO
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