发明名称 METHOD AND APPARATUS TO FABRICATE AN ON-CHIP DECOUPLING CAPACITOR
摘要 A method of fabricating a decoupling capacitor includes depositing a first barrier metal on a conducting metal. The first barrier metal acts as a first electrode of the decoupling capacitor. A dielectric is deposited on the first barrier metal. A second barrier metal is deposited on the dielectric. The second barrier metal acts as a second electrode of the decoupling capacitor. A photoresist is exposed to ultraviolet light. The photoresist is applied on the second barrier metal. A mask is utilized to define an approximate shape of the decoupling capacitor. A portion of the second barrier metal is etched. A quantity of the 10 photoresist is removed.
申请公布号 WO2004032236(A2) 申请公布日期 2004.04.15
申请号 WO2003US29768 申请日期 2003.09.19
申请人 INTEL CORPORATION 发明人 BLOCK, BRUCE;THOMAS, CHRISTOPHER
分类号 H01L21/02;H01L23/522 主分类号 H01L21/02
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