| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resin which makes it possible to produce such a photoresist having excellent transparency and dry etching-proof property as a chemical amplification resist for a radiation, especially for KrF excimer laser, etc., and further having excellent characteristics in resolution, sensitivity, heat resistance, wide focus margin and wide exposure margin etc. <P>SOLUTION: The resin for the photoresist is the one wherein at least a part of hydroxy groups of a novolac type phenol resin obtained by reacting phenols with aldehydes in the presence of an acid catalyst, is protected by a group which is releasable by the action of an acid, and the said phenols comprise m-cresol and phenols represented by a particular structural formula. <P>COPYRIGHT: (C)2004,JPO |
