| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern which permits microwiring suppressing a conductor resistance to a lower level and is useful for densification of semiconductor package circuit boards. <P>SOLUTION: The resist pattern having a film thickness 1 to 100 μm and an aspect ratio (ratio of a line width to the film thickness of the resist pattern) ≥3.5 is formed. The resist pattern can be manufactured by using a photosensitive composition containing, for example, (A) a binder polymer, (B1) a photopolymerizable compound having three ethylenically unsaturated bonds within the molecule, (C) a photopolymerization initiator, and (D) either or both of the compound expressed by general formula (I) (where (m) is an integer from 2 to 6) or the compound expressed by general formula (II). <P>COPYRIGHT: (C)2004,JPO |
