发明名称 SUBSTRATE PROCESSOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To evade troubles in valve mechanism, valveless mechanism, etc. and perform quickly change of two or more kinds of reactant gasses. SOLUTION: A substrate processor is provided with a treatment room 20 for treating a wafer 20, a material gas charging line 21 whose one end is connected with the room 20, a vaporizer 22 which is connected with the other end of the line 21 and evaporates the liquid material, and a liquid material control unit 23 for controlling the amount of supply of liquid material to be supplied to the the vaporizer 22. The control unit 23 is constituted of a screw feeder 50 or a dispenser 70 which spout liquid material to the vaporizer 22. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004119486(A) 申请公布日期 2004.04.15
申请号 JP20020277665 申请日期 2002.09.24
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MIYA HIRONOBU;HORII SADAYOSHI
分类号 C23C16/448;H01L21/31;H01L21/316;(IPC1-7):H01L21/31 主分类号 C23C16/448
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