| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon oxynitride film having high permittivity and a reduced interface level and/or fixed charge wherein an increase in film thickness is suppressed when a high dielectric film is formed on the surface. SOLUTION: In a nitriding process for a silicon oxide film using nitrogen radical, the temperature T of a substrate in a nitriding atmosphere is made to give D=D<SB>0</SB>×exp(-ΔE/RT) satisfying D≤Tox<SP>2</SP>/t, where D denotes the diffusion coefficient of the nitrogen radical in the oxide film, Tox denotes the thickness of the oxide film, t denotes a nitriding time, D<SB>0</SB>denotes the pre-exponential factor of the diffusion coefficient,ΔE denotes activation energy for the diffusion coefficient, and R denotes a gas constant. COPYRIGHT: (C)2004,JPO
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