| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus whereby an Si-doped n-type GaAs single crystal is produced by a vertical boat method using liquid boron oxide without allowing dislocation due to the deposition of boron arsenide. SOLUTION: In the method for producing a GaAs single crystal by the vertical boat method, liquid boron oxide 4 is placed on the surface of a GaAs melt 2 and Si is added as an impurity. After boron arsenide 5 is added and caused to float at the interface between the upper face of the GaAs melt 2 and the liquid boron oxide 4, the GaAs single crystal 8 is grown. The apparatus for producing the GaAs single crystal is equipped with a boron arsenide charging mechanism. By the method, an Si-doped n-type GaAs single crystal with a carrier concentration of 2×10<SP>17</SP>-4×10<SP>18</SP>cm<SP>-3</SP>and a very low dislocation density of≤100 cm<SP>-2</SP>or no dislocation is obtained. COPYRIGHT: (C)2004,JPO
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