发明名称 |
PROCESS FOR FORMING METAL OXIDE THIN FILM AND METAL OXIDE THIN FILM OBTAINED THROUGH THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a metal oxide thin film formed at a lower temperature. SOLUTION: In a process for forming the thin film, the thin film of a metal oxide containing at least one metal element is formed on a substrate. The process comprises an application step wherein a sol-gel solution containing the metal element is applied onto the substrate, a subsequent drying step wherein the sol-gel solution is dried to form a dried gel film on the substrate, a subsequent soaking step wherein the substrate onto which the dried gel film is formed is soaked in an aqueous alkaline solution containing at least one metal element in a vessel, a sealing step wherein the vessel is sealed and a hydrothermal treatment step wherein the dried gel film is subjected to hydrothermal treatment in the sealed vessel to form the metal oxide thin film on the substrate. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004115277(A) |
申请公布日期 |
2004.04.15 |
申请号 |
JP20020276399 |
申请日期 |
2002.09.20 |
申请人 |
HANDOTAI RIKOUGAKU KENKYU CENTER:KK |
发明人 |
GI SHIKIYO;NODA MINORU;OKUYAMA MASANORI |
分类号 |
C01B13/32;C01B13/14;C01G23/00;C30B5/00;C30B29/32;H01L21/314;H01L21/316;(IPC1-7):C01B13/32 |
主分类号 |
C01B13/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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