发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.
申请公布号 US2004071613(A1) 申请公布日期 2004.04.15
申请号 US20030681615 申请日期 2003.10.08
申请人 GOTO MASASHI;NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA 发明人 GOTO MASASHI;NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA
分类号 H05H1/46;C23C16/511;C23F4/00;H01J37/32;H01L21/304;H01L21/3065;H01L21/31;(IPC1-7):B01J19/08 主分类号 H05H1/46
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