| 摘要 |
A semiconductor device having a memory region formed of non-volatile memory devices arranged in a matrix of a plurality of rows and columns. Each nonvolatile memory device has a word gate formed above a semiconductor layer with a gate insulating layer interposed, an impurity layer formed in the semiconductor layer to form a source region or a drain region, and control gates formed in the form of side walls formed along both side surfaces of the word gate. Each control gate includes a first control gate and a second control gate in mutual contact, where the first and second control gates are respectively formed on charge accumulation layers of different thicknesses.
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