| 摘要 |
A device for locally measuring the layer thickness of a sample and/or for locally modifying the thickness thereof with an electron beam, comprising an electron canon, a diaphragm with a focussing device, an electrically conductive grid, a beam deflector device, and a sample holder wherein the samples to be measured are clamped in such a way that they are exposed to the electron beam by moving them in a successive manner perpendicular to the axis of the beam. The sample holder is frontally rotated and re-rotated about an axis perpendicular to the axis of the beam such that the surface normal of the exposed sample is always perpendicular to said axis and is positioned at each angle in relation to the axis of the beam. The invention also consists of a collector for the electron beam passing through the sample, a first amplifier connected to the target for the electron beam, a second amplifier connected to the grid, an evaluation device connected to the two amplifiers, a device for producing a deflecting voltage, whose input is indirectly or directly connected to the output of the second amplifier and whose output is connected to the beam deflector device. |
