发明名称 |
Method for forming nanocrystalline diamond films for cold electron emission using hot filament reactor |
摘要 |
A method is provided for growing diamond films on substrates for formation of cold cathodes having high electron emission at a low electric field. High and uniform electron emission properties are obtained by growing the film in a hot filament reactor and in proximity to the surface of a heated grid made of graphite or other selected materials. The grid temperature is in the range of about 800° C. to about 2000° C. Mixtures of hydrogen and carbon-containing gases are used to forms the diamond.
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申请公布号 |
US2004071876(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20030464342 |
申请日期 |
2003.06.18 |
申请人 |
RAKHIMOV ALEXANDR TURSUNOVICH;SAMORODOV VLADIMIR ANATOLIEVICH;SUETIN NIKOLAI VLADIMIR;POCHINKIN VALENTIN VLADIMIROVICH |
发明人 |
RAKHIMOV ALEXANDR TURSUNOVICH;SAMORODOV VLADIMIR ANATOLIEVICH;SUETIN NIKOLAI VLADIMIR;POCHINKIN VALENTIN VLADIMIROVICH |
分类号 |
C23C16/02;C23C16/27;(IPC1-7):C23C16/26 |
主分类号 |
C23C16/02 |
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